Sifat Listrik Kapasitor MOS dengan Oksida Strontium Titanat (SrTiO3)
DOI:
https://doi.org/10.22373/crc.v1i1.305Keywords:
Capacitance, Metal Oxide Semiconductor (MOS), Strontium Titanat (SrTiO₃), Dielectric ConstantaAbstract
Telah dilakukan pengujian pada semikonduktor kapasitor metal oksida(MOS) dengan bahan oksida Strontium Titanat (SrTiO3) yang disintesis menggunakan metode chemical bath deposition (CBD) dengan substrat silicon kristal. Oksida strontium titanat adalah oksida yang memiliki nilai dielektrisitas yang tinggi. Hasil penelitian menunjukkan bahwa deposisi lapisan oksida berada pada ketebalan 200 nm, dan didapatkan kapasitansi terbesar 304 pF pada oksida dengan ketebalan 33,34 nm dan luas substrat 0,7 cm2 Keyword : Capacitance, Metal Oxide Semiconductor (MOS), Strontium Titanat (SrTiO3), Dielectric Constanta.
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2015-09-02
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